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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

Brand Name : INFINEON/IR

Model Number : IRGB10B60KDPBF

Certification : CE/ RoHS

Place of Origin : Germany

MOQ : 5-10pcs

Price : To be negotiated

Payment Terms : T/T, Western Union,paypal

Supply Ability : 10,000PCS

Delivery Time : in stock 2-3days

Packaging Details : Tube

Description : IGBT NPT 600 V 22 A 156 W Through Hole TO-220AB

PN : IRGB10B60KDPBF

Brand : INFINEON/IR

Original : Germany

Type : Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode

Voltage : IGBT 600V 22A 156W

Package : TO220AB

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IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB

 

 

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
 
 
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
 
 
Part Number IRGB10B60KDPBF
Manufacturer Infineon 
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon 
Packaging Tube
Original  Germany
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Max) @ Vge Ic 2.2V @ 15V 10A
Power - Max 156W
Switching Energy 140µJ (on) 250µJ (off)
Input Type Standard
Gate Charge 38nC

 

 
 
 

Product Tags:

156W Insulated Gate Bipolar Transistor

      

22A Insulated Gate Bipolar Transistor

      

IGBT Bipolar Recovery Diode

      
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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF Images

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